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Electrical properties of La(2)O(3) and HfO(2)/La(2)O(3) gate dielectrics for germanium metal-oxide-semiconductor devicesMavrou, G.; Galata, S.; Tsipas, P.; Sotiropoulos, A.; Panayiotatos, Y.; Dirnoulas, A.; Evangelou, E. K.; Seo, J. W.; Dieker, C.24-Nov-2015-
SILC decay in La(2)O(3) gate dielectrics grown on Ge substrates subjected to constant voltage stressRahman, M. S.; Evangelou, E. K.; Androulidakis, I. I.; Dimoulas, A.; Mavrou, G.; Galata, S.24-Nov-2015-
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